| 產(chǎn)品參數(shù) |
| VS1602GTH 100V/130A N-Channel Advanced Power MOSFET 品牌 | 威兆 |
| 封裝 | TO-220AB |
| 批號 | 23 |
| 數(shù)量 | 230099 |
| V DS | 100V |
| R DS(on) |
| TYP@ VGS=10 V | 3.6 m? |
| I D(Wire bond limited) | 130A |
| 可售賣地 | 全國 |
| 型號 | VS1602GTH | |
Maximum ratings, atTA=25°C, unless otherwise specified
Symbol Parameter Rating Unit
V(BR)DSS
Drain-Source breakdown voltage 100 V
VGS
Gate-Source voltage ±20 V
IS
Diode continuous forward current (Wire bond limited)
TC= 25°C
130 A
ID
Continuous drain current @VGS=10V (Wire bond limited)
TC= 25°C
130 A
ID
Continuous drain current @VGS=10V (Silicon limited)
TC= 100°C
120 A
IDM
Pulse drain current tested ①
TC=25°C
675 A
IDSM
Continuous drain current @VGS=10V
TA=25°C 16 A
TA=70°C 12 A
EAS Maximum Avalanche energy, single pulsed ②
484 mJ
PD
Maximum power dissipation ③
TC= 25°C
250 W
PDSM
Maximum power dissipation ④
TA=25°C 2.1 W
TJ,TSTG
Operating junction and storage temperature range -55 to 175 °C
Thermal Characteristics
Symbol Parameter Typical Max Unit
RθJC
Thermal Resistance, Junction-to-Case ⑤
0.5 0.6 °C/W
RθJA
Thermal Resistance, Junction-to-Ambient ⑥
50 60 °C/W
