| 產品參數 |
|
| 品牌 | 芯控源 |
| 封裝 | DFN3*3 |
| 批號 | 2022 |
| 數量 | 5000 |
| BVDSS | 30V |
| ID | 34A |
| RDSON | 6.8毫歐 |
| 可售賣地 | 全國 |
| 型號 | AGM306MAP | |
至為芯場管效應?MOSFET AGM306MAP(無線充MOS)?
●General Descrtption
The AGM306MAP combines advanced trench
MOSFET technology with a low resistance
package to provide extremely low RDS(ON) . This
device is ideal for load switch and battery
protection applications.
●Features
■ Advance high cell density Trench technology
■Low RDS(ON) to minimize conductive loss
■Low Gate Charge for fast switching
■Low Thermal resistance
●Application
■MB/VGA Vcore
■SMPS 2nd Synchronous Rectifier
■POL application
■BLDC Motor driver
